Structure and formation method of semiconductor device structure

ABSTRACT

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a protection element over the gate stack. A top of the protection element is wider than a bottom of the protection element. The semiconductor device structure also includes a spacer element over a side surface of the protection element and a sidewall of the gate stack. The semiconductor device structure further includes a conductive contact electrically connected to a conductive feature over the semiconductor substrate.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a Continuation-In-Part of pending U.S. patentapplication Ser. No. 14/743,768, filed Jun. 18, 2015 and entitled“Structure and formation method of semiconductor device structure”. Thisapplication also claims the benefit of U.S. Provisional Application No.62/175,816, filed on Jun. 15, 2015, the entirety of which isincorporated by reference herein.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapidgrowth. Technological advances in IC materials and design have producedgenerations of ICs. Each generation has smaller and more complexcircuits than the previous generation.

In the course of IC evolution, functional density (i.e., the number ofinterconnected devices per chip area) has generally increased whilegeometric size (i.e., the smallest component (or line) that can becreated using a fabrication process) has decreased. This scaling downprocess generally provides benefits by increasing production efficiencyand lowering associated costs.

However, these advances have increased the complexity of processing andmanufacturing ICs. Since feature sizes continue to decrease, fabricationprocesses continue to become more difficult to perform. Therefore, it isa challenge to form reliable semiconductor devices at smaller andsmaller sizes.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1I are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments.

FIG. 2 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments.

FIG. 3A is a cross-sectional view of semiconductor device structure, inaccordance with some embodiments.

FIG. 3B is a cross-sectional view of semiconductor device structure, inaccordance with some embodiments.

FIG. 3C is a cross-sectional view of semiconductor device structure, inaccordance with some embodiments.

FIG. 3D is a cross-sectional view of semiconductor device structure, inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Some embodiments of the disclosure are described. FIGS. 1A-1I arecross-sectional views of various stages of a process for forming asemiconductor device structure, in accordance with some embodiments.Additional operations can be provided before, during, and/or after thestages described in FIGS. 1A-1I. Some of the stages that are describedcan be replaced or eliminated for different embodiments. Additionalfeatures can be added to the semiconductor device structure. Some of thefeatures described below can be replaced or eliminated for differentembodiments.

As shown in FIG. 1A, a semiconductor substrate 100 is provided. In someembodiments, the semiconductor substrate 100 is a bulk semiconductorsubstrate, such as a semiconductor wafer. For example, the semiconductorsubstrate 100 is a silicon wafer. The semiconductor substrate 100 mayinclude silicon or another elementary semiconductor material such asgermanium. In some other embodiments, the semiconductor substrate 100includes a compound semiconductor. The compound semiconductor mayinclude gallium arsenide, silicon carbide, indium arsenide, indiumphosphide, another suitable compound semiconductor, or a combinationthereof.

In some embodiments, the semiconductor substrate 100 includes asemiconductor-on-insulator (SOI) substrate. The SOI substrate may befabricated using a separation by implantation of oxygen (SIMOX) process,a wafer bonding process, another applicable method, or a combinationthereof.

In some embodiments, one or multiple fin structures are formed. As shownin FIG. 1A, one of the fin structures (the fin structure 101) is shown.In some embodiments, multiple recesses (or trenches) (not shown) areformed in the semiconductor substrate 100. As a result, multiple finstructures including a fin structure 101 are formed between therecesses. In some embodiments, one or more photolithography and etchingprocesses are used to form the recesses.

As shown in FIG. 1A, isolation features (not shown) are formed in therecesses to surround a lower portion of the fin structure 101, inaccordance with some embodiments. The isolation features are used todefine and electrically isolate various device elements formed in and/orover the semiconductor substrate 100. In some embodiments, the isolationfeatures include shallow trench isolation (STI) features, localoxidation of silicon (LOCOS) features, another suitable isolationfeature, or a combination thereof.

In some embodiments, each of the isolation features has a multi-layerstructure. In some embodiments, the isolation features are made of adielectric material. The dielectric material may include silicon oxide,silicon nitride, silicon oxynitride, fluoride-doped silicate glass(FSG), low-K dielectric material, another suitable material, or acombination thereof. In some embodiments, an STI liner (not shown) isformed to reduce crystalline defects at the interface between thesemiconductor substrate 100 and the isolation features. Similarly, theSTI liner may also be used to reduce crystalline defects at theinterface between the fin structures and the isolation features.

In some embodiments, a dielectric material layer is deposited over thesemiconductor substrate 100. The dielectric material layer covers thefin structures including the fin structure 101 and fills the recessesbetween the fin structures. In some embodiments, the dielectric materiallayer is deposited using a chemical vapor deposition (CVD) process, aspin-on process, another applicable process, or a combination thereof.In some embodiments, a planarization process is performed to thin downthe dielectric material layer until the fin structure 101 is exposed.The planarization process may include a chemical mechanical polishing(CMP) process, a grinding process, an etching process, anotherapplicable process, or a combination thereof. Afterwards, the dielectricmaterial layer is etched back to below the top of the fin structure 101.As a result, the isolation features are formed. The fin structuresincluding the fin structure 101 protrude from the isolation features, inaccordance with some embodiments.

As shown in FIG. 1A, a gate dielectric layer 104 is deposited over theisolation features and the fin structure 101, in accordance with someembodiments. In some embodiments, the gate dielectric layer 104 is madeof silicon oxide, silicon nitride, silicon oxynitride, dielectricmaterial with high dielectric constant (high-K), another suitabledielectric material, or a combination thereof. Examples of high-Kdielectric materials include hafnium oxide, zirconium oxide, aluminumoxide, hafnium dioxide-alumina alloy, hafnium silicon oxide, hafniumsilicon oxynitride, hafnium tantalum oxide, hafnium titanium oxide,hafnium zirconium oxide, another suitable high-K material, or acombination thereof. In some embodiments, the gate dielectric layer 104is a dummy gate dielectric layer which will subsequently be removed. Insome other embodiments, the gate dielectric layer 104 is not formed.

In some embodiments, the gate dielectric layer 104 is deposited using achemical vapor deposition (CVD) process, an atomic layer deposition(ALD) process, a thermal oxidation process, a physical vapor deposition(PVD) process, another applicable process, or a combination thereof.

Afterwards, a gate electrode 106 is formed over the gate dielectriclayer 104 to cover a portion of the fin structure 101, as shown in FIG.1A in accordance with some embodiments. In some embodiments, the gateelectrode 106 is a dummy gate electrode which will be replaced with ametal gate electrode. In some embodiments, the gate electrode 106 ismade of polysilicon. In some embodiments, the portion of the finstructure 101 under the gate electrode 101 serves as a channel region.

In some embodiments, a gate electrode layer is deposited over the gatedielectric layer 104 using a CVD process or another applicable process.In some embodiments, the gate electrode layer is made of polysilicon.Afterwards, a patterned hard mask layer (not shown) is formed over thegate electrode layer, in accordance with some embodiments. The patternedhard mask layer may be used to pattern the gate electrode layer into oneor more gate electrodes including the gate electrode 106 shown in FIG.1A. In some embodiments, the gate dielectric layer 104 is alsopatterned, as shown in FIG. 1A. The gate electrode 106 and the gatedielectric layer 104 may together form a gate stack 109. In someembodiments, the gate stack 109 is a dummy gate stack and will bereplaced with a metal gate stack. In some embodiments, the gate stack109 surrounds side surfaces and a top surface of the fin structure 101and further extends over the semiconductor substrate 100.

In some embodiments, the patterned hard mask layer includes a first hardmask layer and a second hard mask layer. The first hard mask layer isbetween the gate electrode layer and the second hard mask layer. In someembodiments, the first hard mask layer is made of silicon nitride. Insome embodiments, the second hard mask layer is made of silicon oxide.In some embodiments, the second hard mask layer is thicker than thefirst mask layer.

In some embodiments, sealing elements (not shown) are formed oversidewalls of the gate stack 109. The sealing elements may be used toprotect the gate stack 109 and assist in a subsequent process forforming lightly-doped source/drain (LDS/D) regions. In some embodiments,an ion implantation process is used to form the LDS/D regions. In someother embodiments, the sealing elements are not formed. In some otherembodiments, the LDS/D regions are not formed.

Afterwards, spacer elements 108 are formed over sidewalls of the gatestack 109, as shown in FIG. 1A in accordance with some embodiments. Thespacer elements 108 may be used to protect the gate stack 109 and assistin a subsequent process for forming source/drain features. In someembodiments, the spacer elements 108 are made of a dielectric material.The dielectric material may include silicon nitride, silicon oxynitride,silicon oxide, another suitable material, or a combination thereof.

In some embodiments, a dielectric material layer is deposited over thesemiconductor substrate 100 and the gate stack 109. The dielectricmaterial layer may be deposited using a CVD process, an ALD process, aspin-on process, another applicable process, or a combination thereof.Afterwards, the dielectric material layer is partially removed using anetching process, such as an anisotropic etching process. As a result,the remaining portions of the dielectric material layer over thesidewalls of the gate stack 109 form the spacer elements 108.

As shown in FIG. 1A, source/drain features 112 are formed over theportions of the fin structure 101, in accordance with some embodiments.In some embodiments, the fin structure 101 is partially removed to formrecesses near the spacer elements 108. Afterwards, an epitaxial growthprocess is performed to form the source/drain features 112, as shown inFIG. 1A in accordance with some embodiments. In some embodiments, thesource/drain features 112 are also used as stressors that can applystrain or stress on the channel region between the source/drain features112. The carrier mobility may be improved accordingly.

As shown in FIG. 1A, a dielectric layer 114 is formed to surround thegate stack 109, in accordance with some embodiments. In someembodiments, a dielectric material layer is deposited to cover thesource/drain features 112, the spacer elements 108, and the gate stack109. Afterwards, a planarization process is used to partially remove thedielectric material layer until the gate electrode 106 is exposed. As aresult, the dielectric layer 114 is formed.

In some embodiments, the dielectric material layer is made of siliconoxide, silicon oxynitride, borosilicate glass (BSG), phosphoric silicateglass (PSG), borophosphosilicate glass (BPSG), fluorinated silicateglass (FSG), low-k material, porous dielectric material, anothersuitable material, or a combination thereof. In some embodiments, thedielectric material layer is deposited using a CVD process, an ALDprocess, a spin-on process, another applicable process, or a combinationthereof. In some embodiments, the planarization process includes a CMPprocess, a grinding process, an etching process, another applicableprocess, or a combination thereof.

In some embodiments, multiple etching operations are performed to removethe gate electrode 106. In some embodiments, these etching operationsare performed within the same process chamber.

As shown in FIG. 1B, the gate electrode 106 is removed to form a recess116 between the spacer elements 108, in accordance with someembodiments. Afterwards, the gate dielectric layer 104 is removed, inaccordance with some embodiments. The recess 116 exposes the finstructure 101 in some embodiments. One or more etching processes may beused to form the recess 116.

As shown in FIG. 1C, the spacer elements 108 are partially removed toenlarge the width of the recess 116, in accordance with someembodiments. In some embodiments, an upper portion of the recess 116gradually becomes narrower along a direction from a top of the recess116 towards the semiconductor substrate 100. In some embodiments, anetching process, such as an anisotropic etching process, is used topartially remove the spacer elements 108. The conditions of the etchingprocess are fine-tuned to laterally etch upper portions of the spacerelements 108. In some embodiments, a gas mixture is used as the reactiongas for performing the etching process. The gas mixture may include CF₄,O₂, CHF₃, N₂, Ar, NF₃, He, HBr, Cl₂, SF₆, CH₄, another suitable gas, ora combination thereof. During the etching operations, the composition ofthe gas mixture may be varied according to requirements.

In some embodiments, the pressure during the etching operations ismaintained in a range from about 1 mtorr to about 80 mtorrs. In someembodiments, the operation power used for performing the etchingoperations is in a range from about 100 W to about 1500 W. In someembodiments, the operation temperature for performing the etchingoperations is in a range from about 10 degrees C. to about 80 degrees C.In some embodiments, the operation time for performing the etchingoperations is in a range from about 5 seconds to about 600 seconds.

As shown in FIG. 1D, metal gate stack layers including a gate dielectriclayer 118, a work function layer 120, and a conductive filling layer 122are deposited to fill the recess 116, in accordance with someembodiments. The metal gate stack layers may include one or more otherlayers. For example, a barrier layer is formed between the gatedielectric layer 118 and the work function layer 120. A blocking layermay be formed between the work function layer 120 and the conductivefilling layer 122. In some embodiments, the filling of the metal gatestack layers becomes easier since the recess 116 is widened after theetching process mentioned above.

In some embodiments, the gate dielectric layer 118 is made of adielectric material with high dielectric constant (high-K). The gatedielectric layer 118 may be made of hafnium oxide, zirconium oxide,aluminum oxide, hafnium dioxide-alumina alloy, hafnium silicon oxide,hafnium silicon oxynitride, hafnium tantalum oxide, hafnium titaniumoxide, hafnium zirconium oxide, another suitable high-K material, or acombination thereof.

The work function layer 120 is used to provide the desired work functionfor transistors to enhance device performance, such as improvedthreshold voltage. In some embodiments, the work function layer 120 isan n-type metal layer capable of providing a work function value that issuitable for the device, such as equal to or less than about 4.5 eV. Insome embodiments, the work function layer 120 is a p-type metal layercapable of providing a work function value that is suitable for thedevice, such as equal to or greater than about 4.8 eV.

The n-type metal layer may include metal, metal carbide, metal nitride,or a combination thereof. For example, the n-type metal layer includestitanium nitride, tantalum, tantalum nitride, other suitable materials,or a combination thereof. The p-type metal layer may include metal,metal carbide, metal nitride, other suitable materials, or a combinationthereof. For example, the p-type metal includes tantalum nitride,tungsten nitride, titanium, titanium nitride, other suitable materials,or a combination thereof.

The work function layer 120 may also be made of hafnium, zirconium,titanium, tantalum, aluminum, metal carbides (e.g., hafnium carbide,zirconium carbide, titanium carbide, aluminum carbide), aluminides,ruthenium, palladium, platinum, cobalt, nickel, conductive metal oxides,or a combination thereof. The thickness and/or the compositions of thework function layer 120 may be fine-tuned to adjust the work functionlevel. For example, a titanium nitride layer may be used as a p-typemetal layer or an n-type metal layer, depending on the thickness and/orthe compositions of the titanium nitride layer.

In some embodiments, the conductive filling layer 122 is made of a metalmaterial. The metal material may include tungsten, aluminum, copper,another suitable material, or a combination thereof. The formation ofthe metal gate stack layers may involve multiple deposition processes.The deposition processes may include a CVD process, an ALD process, aPVD process, an electroplating process, an electroless plating process,a spin-on process, another applicable process, or a combination thereof.

As shown in FIG. 1E, a planarization process is performed to remove theportions of the metal gate stack layers outside of the recess 116between the spacer elements 106, in accordance with some embodiments. Asa result, a metal gate stack 123 is formed. The metal gate stack 123includes the gate dielectric layer 118, the work function layer 120, anda conductive electrode 122′ that is a portion of the conductive fillinglayer 122.

As shown in FIG. 1F, the metal gate stack 123 is partially removed toform a recess 124, in accordance with some embodiments. In someembodiments, the recess 124 is formed using an etching back process. Insome embodiments, the metal gate stack 123 has a substantially planartop surface after the etching back process. In other words, top surfacesof the gate dielectric layer 118, the work function layer 120, and theconductive electrode 122′ are substantially at the same height level. Insome embodiments, because the metal gate stack 123 has a substantiallyplanar top surface, the subsequent formation of a conductive contact onthe metal gate stack is facilitated.

In some embodiments, a gas mixture is used as the reaction gas forperforming the etching back process. The gas mixture may include BCl₃,HBr, Cl₂, SF₆, Ar, N₂, O₂, SiCl₄, CF₄, CHF₃, CH₄, H₂, another suitablegas, or a combination thereof. During the etching operations, thecomposition of the gas mixture may be varied according to requirements.

In some embodiments, the pressure during the etching operations ismaintained in a range from about 1 mtorr to about 100 mtorrs. In someembodiments, the operation power used for performing the etchingoperations is in a range from about 100 W to about 1500 W. In someembodiments, the operation temperature for performing the etchingoperations is in a range from about 10 degrees C. to about 80 degrees C.In some embodiments, the operation time for performing the etchingoperations is in a range from about 5 seconds to about 600 seconds.

As shown in FIG. 1G, a protection material layer 125 is deposited overthe dielectric layer 114 and the metal gate stack 123 to fill the recess124. In some embodiments, the protection material layer 125 is made of amaterial that is different from that of the spacer elements 106. In someembodiments, the protection material layer 125 is made of a dielectricmaterial. The dielectric material may include silicon nitride, siliconoxynitride, silicon carbide, silicon carbon nitride, oxide, anothersimilar material, another suitable material, or a combination thereof.In some embodiments, the protection material layer 125 is depositedusing a CVD process, an ALD process, a spin-on process, anotherapplicable process, or a combination thereof.

Afterwards, the portion of the protection material layer 125 outside ofthe recess 124 is removed, as shown in FIG. 1H in accordance with someembodiments. As a result, the remaining portion of the protectionmaterial layer 125 in the recess 124 forms a protection element 126, asshown in FIG. 1H. In some embodiments, a planarization process is usedto partially remove the protection material layer 125 to achieve theformation of the protection element 126. In some embodiments, theplanarization process includes a chemical mechanical polishing (CMP)process, a grinding process, an etching process, another applicableprocess, or a combination thereof.

As shown in FIG. 1H, the protection element 126 has a first width W₁near a bottom 126 b of the protection element 126 and a second width W₂near a top 126 t of the protection element 126. The width W₂ is greaterthan the width W₁. In some embodiments, the first width W₁ is in a rangefrom about 20 nm to about 40 nm. In some embodiments, the second widthW₂ is in a range from about 25 nm to about 50 nm. In some embodiments,the protection element 126 gradually becomes narrower along a directionfrom the top 126 t towards the bottom 126 b of the protection element126 (the metal gate stack 123). In some embodiments, the spacer element106 gradually becomes narrower along a direction from the bottom 126 bof the protection element 126 towards the top 106 t of the spacerelement 106.

As shown in FIG. 1H, the protection element 126 has a thickness T. Insome embodiments, the thickness T is in a range from about 100 Å toabout 500 Å. In some embodiments, a total height H of the gate stack 123over the fin structure 101 and the protection element 126 is in a rangefrom about 300 Å to about 2000 Å. In some embodiments, a ratio (T/H) ofthe thickness T to the total height H s in a range from about 1/20 toabout ⅗.

As shown in FIG. 1H, there is an angle θ between a side surface 126 s ofthe protection element 126 and an imaginary plane P extending from thebottom 126 b of the protection element 126. In some embodiments, theangle θ should be carefully controlled to be within a suitable range. Insome embodiments, the angle θ is in a range from about 30 degrees toabout 85 degrees. In some other embodiments, the angle θ is in a rangefrom about 40 degrees to about 80 degrees.

As shown in FIG. 1I, a conductive contact 130 is formed to electricallyconnect to a conductive feature over the semiconductor substrate 100, inaccordance with some embodiments. In some embodiments, the conductivecontact 130 is electrically connected to the source/drain feature 112formed on the fin structure 101. In some embodiments, a dielectric layer128 is formed over the structure shown in FIG. 1H before the formationof the conductive contact 130. Afterwards, the dielectric layer 128 ispatterned to form a contact opening that exposes the conductive featuresuch as the source/drain feature 112.

In some embodiments, the dielectric layer 128 includes multipledielectric layers. In some embodiments, the dielectric layer 128includes a sub-layer that is used as an etch stop layer. In someembodiments, the dielectric layer 128 is made of silicon oxide, siliconoxynitride, borosilicate glass (BSG), phosphoric silicate glass (PSG),borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG),low-k material, porous dielectric material, silicon nitride, anothersuitable material, or a combination thereof. In some embodiments, thedielectric layer 128 is deposited and planarized afterwards to form asubstantially planar top surface. In some embodiments, the dielectriclayer 128 is deposited using a CVD process, an ALD process, a spin-onprocess, another applicable process, or a combination thereof. In someembodiments, the dielectric layer 128 is planarized using a CMP process,a grinding process, an etching process, another applicable process, or acombination thereof.

Afterwards, a conductive material layer is deposited over the dielectriclayer 128 to fill the contact opening, in accordance with someembodiments. A planarization process is used afterwards to remove theportion of the conductive material layer outside of the contact opening.As a result, the remaining portion of the conductive material layer inthe contact opening forms the conductive contact 130, as shown in FIG.1I.

In some embodiments, the conductive material layer is made of tungsten,aluminum, copper, gold, platinum, titanium, another suitable material,or a combination thereof. In some embodiments, the conductive materiallayer is deposited using a CVD process, a PVD process, an electroplatingprocess, an electroless plating process, another applicable process, ora combination thereof.

Because the spacer elements 106 are partially removed to enlarge therecess 116, the protection element 126 that is formed later also has awider upper portion. The protection element 126 with the wider upperportion may be used to protect the metal gate stack 123 during theformation of the conductive contact. As shown in FIG. 1I, even if amisalignment occurs during the formation of the contact opening, theprotection element 126 protects the metal gate stack thereunder fromdamage. Due to the profile of the protection element, the top of theinterface between the protection element 126 and the spacer element 106is positioned laterally outside of the metal gate stack 123. Therefore,the etchant used during the formation of the contact opening isprevented from penetrating through the interface and reaching the metalgate stack 123. The metal gate stack 123 is therefore protected. A shortcircuiting is prevented between the metal gate stack 123 and theconductive contact 130. Therefore, the performance and reliability ofthe semiconductor device structure are significantly improved.

As mentioned above, in some embodiments, the angle θ between the sidesurface 126 s and the imaginary plane P should be carefully controlledto be within a suitable range. In some embodiments, the angle θ is in arange from about 30 degrees to about 85 degrees. In some cases, if theangle θ is greater than about 85 degrees, the width W₂ may be too small,and the metal gate stack 123 is not protected appropriately. In someother cases, if the angle θ is smaller than about 30 degrees, the widthW₂ may be too great, and occupy too much of the landing area for theconductive contact 130. The upper portion of the spacer element 106 mayalso be too thin for the sidewall of the metal gate stack 123 to beprotected appropriately.

In some embodiments, the conductive contact 130 is in direct contactwith the spacer element 106, as shown in FIG. 1I. In some embodiments,the conductive contact is also in direct contact with the protectionelement 126. However, it should be appreciated that many variationsand/or modifications can be made to embodiments of the disclosure. FIG.2 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments. As shown in FIG. 2, the conductivecontact 130 is in direct contact with the spacer element 106. However,in some embodiments, the conductive contact 130 is not in direct contactwith the protection element 126.

As mentioned above, the metal gate stack 123 has a substantially planartop surface. However, it should be appreciated that embodiments of thedisclosure are not limited thereto. Many variations and/or modificationscan be made to embodiments of the disclosure. FIGS. 3A-3D arecross-sectional views of different semiconductor device structures, inaccordance with some embodiments.

As shown in FIG. 3A, the conductive electrode 122′ protrudes from thework function layer 120 and the gate dielectric layer 118, in accordancewith some embodiments. By fine-tuning the etching back process, the topsurface 122 t of the conductive electrode 122′ is at a higher heightlevel than those of the work function layer 120 and the gate dielectriclayer 118, in accordance with some embodiments. For example, an etchingprocess that etches the work function layer 120 at a higher speed thanthe conductive electrode 122′ is used.

Therefore, after the protection element 126 is formed, the top surface122 t of the conductive electrode 122′ is between the top 126 t and thebottom 126 b of the protection element 126, as shown in FIG. 3A inaccordance with some embodiments. In some embodiments, the top surface120 t of the work function layer 120 and the top surface 118 t of thegate dielectric layer 118 are substantially at the same height level.

Afterwards, a conductive contact is formed to electrically connect tothe conductive electrode 122′ that protrudes from the work functionlayer 120 and the gate dielectric layer 118. In some embodiments, theconductive electrode 122′ has a larger contact area with thesubsequently formed conductive contact than the structure shown in FIG.1I.

Many variations and/or modifications can be made to embodiments of thedisclosure. As shown in FIG. 3B, by fine-tuning the etching backprocess, the top surface 120 t of the work function layer 120 is at ahigher height level than that of the gate dielectric layer 118, inaccordance with some embodiments. In some embodiments, the top surface120 t of the work function layer 120 is between the top surface 122 t ofthe conductive electrode 122′ and the top surface 118 t of the gatedielectric layer 118.

Many variations and/or modifications can be made to embodiments of thedisclosure. As shown in FIG. 3C, the top surface 122 t of conductiveelectrode 122′ is below the top surface 120 t of the work function layer120 and the top surface 118 t of the gate dielectric layer 118, inaccordance with some embodiments. By fine-tuning the etching backprocess, the top surface 122 t of the conductive electrode 122′ is at alower height level than those of the work function layer 120 and thegate dielectric layer 118. For example, an etching process that etchesthe conductive electrode 122′ at a higher speed than the work functionlayer 120 is used. In some embodiments, the top surface 120 t of thework function layer 120 and the top surface 118 t of the gate dielectriclayer 118 are substantially at the same height level.

Many variations and/or modifications can be made to embodiments of thedisclosure. As shown in FIG. 3D, by fine-tuning the etching backprocess, the top surface 120 t of the work function layer 120 is at ahigher height level than that of the gate dielectric layer 118. The topsurface 120 t is at a higher height level than the top surface 122 t ofthe conductive electrode 122′.

Embodiments of the disclosure form a semiconductor device structure witha protection element over a gate stack. The protection element has awider upper portion than a lower portion of the protection element. Theprotection element is used to protect the gate stack from being damagedduring a subsequent contact formation. The reliability and performanceof the semiconductor device structure are greatly improved.

In accordance with some embodiments, a semiconductor device structure isprovided. The semiconductor device structure includes a gate stack overa semiconductor substrate and a protection element over the gate stack.The protection element has an upper portion and a lower portion betweenthe upper portion and the gate stack, and the upper portion is widerthan the lower portion. The semiconductor device structure also includesa spacer element over a side surface of the protection element and asidewall of the gate stack. The semiconductor device structure furtherincludes a conductive contact electrically connected to a conductivefeature over the semiconductor substrate.

In accordance with some embodiments, a semiconductor device structure isprovided. The semiconductor device structure includes a fin structureover a semiconductor substrate and a gate stack over the fin structure.The semiconductor device structure also includes a protection elementover the gate stack. The protection element has an upper portion and alower portion between the upper portion and the gate stack. The upperportion is wider than the lower portion. The semiconductor devicestructure further includes a spacer element over a side surface of theprotection element and a sidewall of the gate stack. In addition, thesemiconductor device structure includes a conductive contactelectrically connected to a source/drain feature over the fin structure.

In accordance with some embodiments, a method for forming asemiconductor device structure is provided. The method includes forminga dummy gate stack over a semiconductor substrate and forming spacerelements over sidewalls of the dummy gate stack. The method alsoincludes removing the dummy gate stack to form a recess between thespacer elements. The method further includes partially removing thespacer elements such that an upper portion of the recess becomes wider.In addition, the method includes forming a metal gate stack in therecess and forming a protection element over the metal gate stack tofill the recess.

In accordance with some embodiments, a semiconductor device structure isprovided. The semiconductor device structure includes a gate stack overa semiconductor substrate and a protection element over the gate stack.A top of the protection element is wider than a bottom of the protectionelement. The semiconductor device structure also includes a spacerelement over a side surface of the protection element and a sidewall ofthe gate stack. The semiconductor device structure further includes aconductive contact electrically connected to a conductive feature overthe semiconductor substrate.

In accordance with some embodiments, a semiconductor device structure isprovided. The semiconductor device structure includes a fin structureover a semiconductor substrate and a gate stack over the fin structure.The semiconductor device structure also includes a protection elementover the gate stack, and a top of the protection element is wider than abottom of the protection element. The semiconductor device structurefurther includes a spacer element over a side surface of the protectionelement and a sidewall of the gate stack. In addition, the semiconductordevice structure includes a conductive contact electrically connected toa source/drain feature over the fin structure.

In accordance with some embodiments, a method for forming asemiconductor device structure is provided. The method includes forminga dummy gate stack over a semiconductor substrate and forming spacerelements over sidewalls of the dummy gate stack. The method alsoincludes removing the dummy gate stack to form a recess between thespacer elements, and partially removing the spacer elements such that anupper portion of the recess becomes wider. The method further includesforming a metal gate stack in the recess and forming a protectionelement in the recess to cover the metal gate stack.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A semiconductor device structure, comprising: a gate stack over asemiconductor substrate; a protection element over the gate stack,wherein a top of the protection element is wider than a bottom of theprotection element; a spacer element over a side surface of theprotection element and a sidewall of the gate stack; and a conductivecontact electrically connected to a conductive feature over thesemiconductor substrate.
 2. The semiconductor device structure asclaimed in claim 1, wherein the gate stack comprises a work functionlayer and a conductive electrode surrounded by the work function layer.3. The semiconductor device structure as claimed in claim 2, wherein atop surface of the work function layer and a top surface of theconductive electrode are at different height levels.
 4. Thesemiconductor device structure as claimed in claim 2, wherein theprotection element is in direct contact with the work function layer andthe conductive electrode.
 5. The semiconductor device structure asclaimed in claim 1, wherein the protection element gradually becomesnarrower along a direction from the top of the protection elementtowards the gate stack.
 6. The semiconductor device structure as claimedin claim 1, wherein the spacer element gradually becomes narrower alonga direction from the bottom of the protection element towards a top ofthe spacer element.
 7. The semiconductor device structure as claimed inclaim 1, wherein an angle between the side surface of the protectionelement and an imaginary plane extending from the bottom of theprotection element is in a range from about 30 degrees to about 85degrees.
 8. The semiconductor device structure as claimed in claim 1,wherein the conductive contact is in direct contact with the spacerelement.
 9. The semiconductor device structure as claimed in claim 8,wherein the conductive contact is not in direct contact with theprotection element.
 10. The semiconductor device structure as claimed inclaim 1, wherein the conductive contact is in direct contact with theprotection element.
 11. A semiconductor device structure, comprising: afin structure over a semiconductor substrate; a gate stack over the finstructure; a protection element over the gate stack, wherein a top ofthe protection element is wider than a bottom of the protection element;a spacer element over a side surface of the protection element and asidewall of the gate stack; and a conductive contact electricallyconnected to a source/drain feature over the fin structure.
 12. Thesemiconductor device structure as claimed in claim 11, wherein theconductive contact is in direct contact with the spacer element.
 13. Thesemiconductor device structure as claimed in claim 11, wherein theconductive contact is in direct contact with the protection element. 14.The semiconductor device structure as claimed in claim 11, wherein theprotection element gradually becomes narrower along a direction from thetop of the protection element towards the gate stack.
 15. Thesemiconductor device structure as claimed in claim 11, wherein thespacer element gradually becomes narrower along a direction from thebottom of the protection element towards a top of the spacer element.16-20. (canceled)
 21. A semiconductor device structure, comprising: ametal gate stack over a semiconductor substrate; a protection elementover the gate stack, wherein the protection element becomes narroweralong a direction from a top of the protection element towards the metalgate stack; a spacer element over a side surface of the protectionelement and a sidewall of the metal gate stack; and a conductive contactelectrically connected to a conductive feature over the semiconductorsubstrate.
 22. The semiconductor device structure as claimed in claim21, wherein a portion of the metal gate stack extends into theprotection element.
 23. The semiconductor device structure as claimed inclaim 21, wherein the metal gate stack comprises a work function layerand a conductive electrode surrounded by the work function layer, and atop surface of the work function layer and a top surface of theconductive electrode are at different height levels.
 24. Thesemiconductor device structure as claimed in claim 21, wherein the metalgate stack comprises a work function layer and a conductive electrode,and a top surface of the work function layer is between a top surface ofthe conductive electrode and a bottom of the protection element.
 25. Thesemiconductor device structure as claimed in claim 21, wherein the metalgate stack comprises a work function layer and a conductive electrode,and a top surface of the work function layer is between a top of theprotection element and a top surface of the conductive electrode.